Toward a Detailed Understanding of Si(111)- Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations
Figure 4
(a), (c) Experimental STM images with bias
voltage of −0.57 and −1.5 V, and tunneling current of 0.3 and 0.41 nA,
respectively. F and U depict the FHUC and UHUC, respectively. (b), (d)
Calculated STM images for Si(111)-7 7 at − 0.57 and
−1.5 V, respectively. The red peaks are about 2 Å above the dark blue
borderlines. (e), (f), and (g) are the calculated height profiles along the
diagonal of the (7 7) unit cell
with a tip apex radius and 24.0 Å, respectively. (h) The
experimental profile. The inset in (f) schematically shows an STM tip with an
adsorbed cluster beneath the apex.
