Toward a Detailed Understanding of Si(111)- Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations
Figure 5
Filled-state STM images (20 nm 20 nm) of the
Si(111)-7 7 surface with
Ge coverages of (a) 0.02 ML; (b) 0.08 ML; and (c) 0.10 ML. Sample bias: −2.2 V
in (a), and −1.5 V in (b) and (c); tunneling current: 0.5 nA in (a), and 0.2 nA
in (b) and (c). Three different configurations of Ge protrusion distributions
are denoted in (b) and (c) by solid-line triangle, dotted-line triangle, and
dashed-line triangle, respectively. The schematics for the three typical Ge
patterns, named type-A, type-B, and type-C, are shown in (d), (e), and (f),
respectively.
