Toward a Detailed Understanding of Si(111)- Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations
Figure 8
(a) Empty-state STM image ( = 2.0 V, = 0.3 nA, 30 nm 30 nm) of the
Si(111)-7 7 surface with
Ge coverage 0.12 ML. The
substrate temperature is held at for the Ge deposition. Ge
clusters with four typical geometrical configurations, named as type-Tr
(triangle), type-Te (tetragonal), type-P (pentagonal), and type-H (hexagonal),
are denoted by the triangles with the dotted dash-line, dotted-line,
dashed-line, and solid-line, and their magnified images (3 nm 3 nm) are shown
in (b), (c), (d), and (e), respectively.
