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Journal of Nanomaterials
Volume 2009, Article ID 429360, 6 pages
Research Article

High-Yield Synthesis of Stoichiometric Boron Nitride Nanostructures

1Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00931, USA
2Department of Physics, University of Puerto Rico, Río Piedras Campus, San Juan, PR 00931, USA
3Pontificia Universidad Católica Madre y Maestra, P.O. Box 2748, Santo Domingo, Dominican Republic
4Department of Chemistry, University of Puerto Rico, Río Piedras Campus, San Juan, PR 00931, USA

Received 11 June 2009; Accepted 5 October 2009

Academic Editor: Songwei Lu

Copyright © 2009 José E. Nocua et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Boron nitride (BN) nanostructures are structural analogues of carbon nanostructures but have completely different bonding character and structural defects. They are chemically inert, electrically insulating, and potentially important in mechanical applications that include the strengthening of light structural materials. These applications require the reliable production of bulk amounts of pure BN nanostructures in order to be able to reinforce large quantities of structural materials, hence the need for the development of high-yield synthesis methods of pure BN nanostructures. Using borazine ( ) as chemical precursor and the hot-filament chemical vapor deposition (HFCVD) technique, pure BN nanostructures with cross-sectional sizes ranging between 20 and 50 nm were obtained, including nanoparticles and nanofibers. Their crystalline structure was characterized by (XRD), their morphology and nanostructure was examined by (SEM) and (TEM), while their chemical composition was studied by (EDS), (FTIR), (EELS), and (XPS). Taken altogether, the results indicate that all the material obtained is stoichiometric nanostructured BN with hexagonal and rhombohedral crystalline structure.