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Journal of Nanomaterials
Volume 2009 (2009), Article ID 435451, 7 pages
Research Article

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

1Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud XI, 91405 Orsay, France
2Laboratoire de Photonique et Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
3St Petersburg Physics and Technology Center for Research and Education RAS, Khlopina 8/3, St Petersburg 195220, Russia

Received 9 July 2009; Revised 26 October 2009; Accepted 19 November 2009

Academic Editor: Sanjay Mathur

Copyright © 2009 Lorenzo Rigutti et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as ·cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.