Journal of Nanomaterials / 2009 / Article / Tab 1

Research Article

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Table 1

NW growth rate for different Si doping levels.

Equivalent 2DNW averageNW growth
doping ( )length ( )rate (nm/min)

1040 2.57112
1070 2.53110
1100 2.53110
1150 1.244

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