Analysis of CNT Bundle and Its Comparison with Copper Interconnect for CMOS and CNFET Drivers

<table>Inductance versus bundle width (<svg height="11.375" id="M33" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 17.4 11.375" width="17.4" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M1004 650l-6 -29q-54 -6 -71 -19.5t-51 -74.5l-271 -539h-33l-98 506h-3l-258 -506h-30l-78 532q-10 67 -21.5 80t-66.5 21l6 29h241l-8 -29l-26 -5q-34 -6 -41 -16t-3 -47l59 -425h4l251 510h31l102 -510h2q150 299 198 423q14 40 8.5 48.5t-47.5 16.5l-28 5l7 29h231z
" id="x1D44A"></path></g>
</svg>).</table>

Journal of Nanomaterials

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Figure 3

Figure 3: Analysis of CNT Bundle and Its Comparison with Copper Interconnect for CMOS and CNFET Drivers 