Growth Mechanism of Cubic-Silicon Carbide Nanowires

<table>3C-SiC nanowires produced at <svg height="13.1875" id="M13" style="vertical-align:-0.20473pt" version="1.1" viewbox="0 0 49.099998 13.1875" width="49.099998" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,32.7,4.712)"><path d="M326 255q0 -56 -41 -96t-99 -40t-99 40t-41 96t41 96t99 40t99 -40t41 -96zM274 255q0 38 -25.5 65t-62.5 27t-62.5 -27t-25.5 -65t25.5 -65t62.5 -27t62.5 27t25.5 65z" id="x2218"></path></g>
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</svg> for 4 h and observed under (a) FESEM and (b) TEM.</table>

Journal of Nanomaterials

Growth Mechanism of Cubic-Silicon Carbide Nanowires

Figure 2