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Journal of Nanomaterials
Volume 2010, Article ID 427689, 6 pages
http://dx.doi.org/10.1155/2010/427689
Research Article

Simple Synthesis and Growth Mechanism of Core/Shell CdSe/ Nanowires

1Laboratory of Nanophotonics Materials and Technology, School of Material Science and Engineering of Beijing, Institute of Technology, Beijing 100081, China
2Key Lab for Micro-Nano Optoeletronic Devices of Ministry of Education, Hunan University, Changsha 410082, China

Received 25 October 2009; Accepted 28 December 2009

Academic Editor: Renzhi Ma

Copyright © 2010 Guozhang Dai et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Core-shell-structured CdSe/ nanowires were synthesized on an equilateral triangle Si (111) substrate through a simple one-step thermal evaporation process. SEM, TEM, and XRD investigations confirmed the core-shell structure; that is, the core zone is single crystalline CdSe and the shell zone is amorphous layer and CdSe core was grown along (001) direction. Two-stage growth process was present to explain the growth mechanism of the core/shell nanwires. The silicon substrate of designed equilateral triangle providing the silicon source is the key factor to form the core-shell nanowires, which is significant for fabrication of nanowire-core sheathed with a silica system. The PL of the product studied at room temperature showed two emission bands around 715 and 560 nm, which originate from the band-band transition of CdSe cores and the amorphous shells, respectively.