Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes

<table>Averaged voltages of Dirac points in the gate response as a function of the metal work function. Inset: scanning electron micrograph image of a typical graphene field effect transistor used in this experiment.</table>

Journal of Nanomaterials

fig2

Figure 2

Figure 2: Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes 