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Journal of Nanomaterials
Volume 2010 (2010), Article ID 840316, 7 pages
http://dx.doi.org/10.1155/2010/840316
Research Article

Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

1Department of Mechanical Engineering, Chienkuo Technology University, Changhua City 50094, Taiwan
2Department of Automation Engineering, Chienkuo Technology University, Changhua City 50094, Taiwan
3Department of Mechanical and Computer-Aided Engineering, National Formosa University, Yunlin 63201, Taiwan
4Department of Electronic Engineering, Chienkuo Technology University, Changhua City 50094, Taiwan
5Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan

Received 31 July 2010; Revised 27 October 2010; Accepted 28 October 2010

Academic Editor: Wanqin Jin

Copyright © 2010 Chin-Chiuan Kuo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222). The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness Rpv of 8.75 nm and an average visible transmittance of 78.7%.