Thickness Dependence of Optoelectrical Properties of Mo-Doped In<sub>2</sub>O<sub>3</sub> Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

<table>Dependence of electrical resistivity and surface roughness on film thickness.</table>

Journal of Nanomaterials

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Figure 5

Figure 5: Thickness Dependence of Optoelectrical Properties of Mo-Doped In<sub>2</sub>O<sub>3</sub> Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation 

Figure 5 | Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation 