Thickness Dependence of Optoelectrical Properties of Mo-Doped In<sub>2</sub>O<sub>3</sub> Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

<table>Optical band gap of the deposited IMO films.</table>

Journal of Nanomaterials

fig8

Figure 8

Figure 8: Thickness Dependence of Optoelectrical Properties of Mo-Doped In<sub>2</sub>O<sub>3</sub> Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation 

Figure 8 | Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation 