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Journal of Nanomaterials
Volume 2011 (2011), Article ID 125846, 7 pages
http://dx.doi.org/10.1155/2011/125846
Research Article

Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

1Department of Electro-Optical Engineering, National Formosa University, Yunlin 63201, Taiwan
2Department of Mechanical Engineering, National Yunlin University of Science and Technology, Yunlin 64054, Taiwan
3National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu 30078, Taiwan
4Institute of Materials Science and Green Energy Engineering, National Formosa University, Yunlin 63201, Taiwan

Received 15 March 2011; Revised 2 May 2011; Accepted 12 May 2011

Academic Editor: Gong Ru Lin

Copyright © 2011 Chin-Lung Cheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2 as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage , drain current versus gate voltage , mobility, subthreshold slope (SS), and transconductance , were obtained.