Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition
Figure 1
Plane view of SEM morphology of random carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. The substrate consists of a highly doped n-type Si(100) wafer with an arsenic doping concentration of cm−3. The growth conditions were carried out at 750°C in the alcohol ambient for (a) 5, (b) 10, (c) 15, and (d) 20 min; respectively, and the partial pressure was achieved in 10 Torr. A Co/Mo acetate was premixed at Co : Mo = 0.1 : 0.1 wt% and dissolved in ethanol with sonication for 8 hour.
