Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition
Figure 7
Drain current versus gate voltage (-) characteristics of (a) p-CNTNFET and (b) n-CNTNFET with an HfO2 of 30 nm as gate dielectric. The channel length and width of CNTNFETs were 1 and 5 μm, respectively.