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Journal of Nanomaterials
Volume 2011, Article ID 140805, 6 pages
Research Article

Memory and Spin Injection Devices Involving Half Metals

Department of Physics, University of California, Davis, CA 95616-8677, USA

Received 27 October 2010; Accepted 22 January 2011

Academic Editor: Zhi Li Xiao

Copyright © 2011 M. Shaughnessy et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injection devices.