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Journal of Nanomaterials
Volume 2011, Article ID 140805, 6 pages
http://dx.doi.org/10.1155/2011/140805
Research Article

Memory and Spin Injection Devices Involving Half Metals

Department of Physics, University of California, Davis, CA 95616-8677, USA

Received 27 October 2010; Accepted 22 January 2011

Academic Editor: Zhi Li Xiao

Copyright © 2011 M. Shaughnessy et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

M. Shaughnessy, Ryan Snow, L. Damewood, and C. Y. Fong, “Memory and Spin Injection Devices Involving Half Metals,” Journal of Nanomaterials, vol. 2011, Article ID 140805, 6 pages, 2011. https://doi.org/10.1155/2011/140805.