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Journal of Nanomaterials
Volume 2011, Article ID 189731, 7 pages
http://dx.doi.org/10.1155/2011/189731
Research Article

Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

1Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

Received 25 July 2011; Accepted 28 August 2011

Academic Editor: Zhi Li Xiao

Copyright © 2011 Mahesh Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The electrical transport behavior of indium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found to be single crystalline and grown along [0 0 0 1] direction. Temperature-dependent current density-voltage plots () reveal that the ideality factor () and Schottky barrier height (SBH) () are temperature dependent. The incorrect values of the Richardson constant () produced suggest an inhomogeneous barrier. Descriptions of the experimental results were explained by using two models. First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination of . The Richardson constant is extracted ~110 A cm−2 K−2 using the BHI model and that is in very good agreement with the theoretical value of 112 A cm−2 K−2. The second model uses Gaussian statistics and by this, mean barrier height and were found to be 0.69 eV and 113 A cm−2 K−2, respectively.