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Journal of Nanomaterials
Volume 2011, Article ID 189731, 7 pages
http://dx.doi.org/10.1155/2011/189731
Research Article

Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

1Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

Received 25 July 2011; Accepted 28 August 2011

Academic Editor: Zhi Li Xiao

Copyright © 2011 Mahesh Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, A. T. Kalghatgi, and S. B. Krupanidhi, “Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes,” Journal of Nanomaterials, vol. 2011, Article ID 189731, 7 pages, 2011. https://doi.org/10.1155/2011/189731.