Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

<table>The barrier heights extracted from <svg height="11.375" id="M143" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 26.2125 11.375" width="26.2125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g><g transform="matrix(.017,-0,0,-.017,7.491,11.112)"><path d="M300 253l-14 -55h-229l14 55h229z" id="x2D"></path></g><g transform="matrix(.017,-0,0,-.017,13.543,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
</svg> analysis plotted against the <svg height="15" id="M144" style="vertical-align:-2.22495pt" version="1.1" viewbox="0 0 43.3125 15" width="43.3125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,12.162)"><path d="M384 0h-275v27q67 5 81.5 18.5t14.5 68.5v385q0 38 -7.5 47.5t-40.5 10.5l-48 2v24q85 15 178 52v-521q0 -55 14.5 -68.5t82.5 -18.5v-27z" id="x31"></path></g><g transform="matrix(.017,-0,0,-.017,8.222,12.162)"><path d="M368 703l-264 -866h-60l265 866h59z" id="x2F"></path></g><g transform="matrix(.017,-0,0,-.017,15.225,12.162)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g><g transform="matrix(.017,-0,0,-.017,23.385,12.162)"><path d="M480 416q0 -21 -18 -41q-9 -11 -17 -7q-20 9 -42 9q-62 0 -140 -78q23 -69 88 -192q17 -31 27 -42t20 -11q16 0 62 46l17 -20q-64 -92 -119 -92q-35 0 -70 66q-41 73 -84 187q-36 -30 -62 -61q-27 -115 -35 -172q-41 -8 -78 -20l-6 6l140 612q7 28 0.5 34t-37.5 7l-34 1
l5 26q38 4 74 13.5t57 17t25 7.5q12 0 4 -32l-104 -443h2q35 38 97 93q39 35 65.5 56t62 41.5t58.5 20.5q19 0 30.5 -10t11.5 -22z" id="x1D458"></path></g><g transform="matrix(.017,-0,0,-.017,31.935,12.162)"><path d="M649 676l-22 -187l-33 -2q3 56 -12 94q-8 20 -31.5 26.5t-86.5 6.5h-74l-90 -491q-4 -23 -6 -36.5t1 -25t7 -16.5t18 -9t27 -5t41 -3l-6 -28h-286l4 28q68 5 84 18.5t28 76.5l94 491h-55q-74 0 -100.5 -6t-41.5 -23q-24 -29 -54 -98l-32 1q32 98 53 188h22q7 -18 15 -22
t37 -4h417q23 0 33.5 5t25.5 21h23z" id="x1D447"></path></g>
</svg><i>. </i></table>

Journal of Nanomaterials

fig10

Figure 10

Figure 10: Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes 