Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

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</svg>. From the slope of the linear fit of the data, an effective SBH of 0.57 eV was determined.</table>

Journal of Nanomaterials

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Figure 7

Figure 7: Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes 