Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

<table>Experimental <svg height="13.6375" id="M116" style="vertical-align:-1.97925pt" version="1.1" viewbox="0 0 26.5625 13.6375" width="26.5625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> plots at the temperatures of 450 K, 300 K, and 200 K, and calculated curves (dotted lines) obtained by applying the BHI model to the InN ND/Si contact.</table>

Journal of Nanomaterials

fig8

Figure 8

Figure 8: Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes 