Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2011, Article ID 189731, 7 pages
http://dx.doi.org/10.1155/2011/189731
Research Article

Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

1Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

Received 25 July 2011; Accepted 28 August 2011

Academic Editor: Zhi Li Xiao

Copyright © 2011 Mahesh Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. S. Nakamura, “The roles of structural imperfections in InGaN-based blue light- emitting diodes and laser diodes,” Science, vol. 281, no. 5379, pp. 956–961, 1998. View at Google Scholar · View at Scopus
  2. J. Wu, W. Walukiewicz, K. M. Yu et al., “Unusual properties of the fundamental band gap of InN,” Applied Physics Letters, vol. 80, no. 21, p. 3967, 2002. View at Publisher · View at Google Scholar · View at Scopus
  3. M. Kumar, B. Roul, T. N. Bhat et al., “Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE,” Journal of Nanoparticle Research, vol. 13, p. 1281, 2011. View at Publisher · View at Google Scholar · View at Scopus
  4. H. C. Yang, P. F. Kuo, T. Y. Lin et al., “Mechanism of luminescence in InGaN/GaN multiple quantum wells,” Applied Physics Letters, vol. 76, no. 25, p. 3712, 2000. View at Google Scholar
  5. E. Bellotti, B. K. Doshi, K. F. Brennan, J. D. Albrecht, and P. P. Ruden, “Ensemble Monte Carlo study of electron transport in wurtzite InN,” Journal of Applied Physics, vol. 85, no. 2, pp. 916–923, 1999. View at Google Scholar · View at Scopus
  6. C. Y. Chang, G. C. Chi, W. M. Wang et al., “Transport properties of InN nanowires,” Applied Physics Letters, vol. 87, no. 9, Article ID 093112, 2005. View at Publisher · View at Google Scholar · View at Scopus
  7. Q. Guo, O. Kato, and A. Yoshida, “Thermal stability of indium nitride single crystal films,” Journal of Applied Physics, vol. 73, no. 11, pp. 7969–7971, 1993. View at Publisher · View at Google Scholar · View at Scopus
  8. K. Wang and R. R. Reeber, “Thermal expansion and elastic properties of InN,” Applied Physics Letters, vol. 79, no. 11, pp. 1602–1604, 2001. View at Publisher · View at Google Scholar · View at Scopus
  9. J. Grandal, M. A. Sánchez-García, E. Calleja, E. Luna, and A. Trampert, “Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy,” Applied Physics Letters, vol. 91, no. 2, Article ID 021902, 2007. View at Publisher · View at Google Scholar · View at Scopus
  10. R. T. Tung, “Electron transport at metal-semiconductor interfaces: general theory,” Physical Review B, vol. 45, no. 23, pp. 13509–13523, 1992. View at Publisher · View at Google Scholar · View at Scopus
  11. P. M. Gammon, A. Pérez-Tomás, V. A. Shah et al., “Analysis of inhomogeneous Ge/SiC heterojunction diodes,” Journal of Applied Physics, vol. 106, no. 9, Article ID 093708, 2009. View at Publisher · View at Google Scholar · View at Scopus
  12. L. Wang, M. I. Nathan, T. H. Lim, M. A. Khan, and Q. Chen, “High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN,” Applied Physics Letters, vol. 68, no. 9, pp. 1267–1269, 1996. View at Publisher · View at Google Scholar · View at Scopus
  13. H. Morkoc, Handbook of Nitride Semiconductors and Devices, Wiley-VCH, New York, NY, USA, 2008.
  14. C. Hayzelden and J. L. Batstone, “Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films,” Journal of Applied Physics, vol. 73, no. 12, pp. 8279–8289, 1993. View at Publisher · View at Google Scholar · View at Scopus
  15. F. Roccaforte, F. La Via, V. Raineri, R. Pierobon, and E. Zanoni, “Richardson's constant in inhomogeneous silicon carbide Schottky contacts,” Journal of Applied Physics, vol. 93, no. 11, pp. 9137–9144, 2003. View at Publisher · View at Google Scholar · View at Scopus
  16. B. Abay, G. Cankaya, H. S. Guder, H. Efeoglu, and Y. K. Yogurtcu, “Barrier characteristics of Cd/p-GaTe Schottky diodes based on I–V–T measurements,” Semiconductor Science and Technology, vol. 18, no. 2, pp. 75–81, 2003. View at Google Scholar
  17. R. F. Schmitsdorf, T. U. Kampen, and W. Mönch, “Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers,” Journal of Vacuum Science and Technology B, vol. 15, no. 4, pp. 1221–1226, 1997. View at Google Scholar
  18. Y. P. Song, R. L. Van Meirhaeghe, W. H. Laflère, and F. Cardon, “On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers,” Solid State Electronics, vol. 29, no. 6, pp. 633–638, 1986. View at Google Scholar · View at Scopus
  19. J. H. Werner and H. H. Güttler, “Barrier inhomogeneities at Schottky contacts,” Journal of Applied Physics, vol. 69, no. 3, pp. 1522–1533, 1991. View at Publisher · View at Google Scholar · View at Scopus
  20. F. E. Jones, B. P. Wood, J. A. Myers, C. Daniels-Hafer, and M. C. Lonergan, “Current transport and the role of barrier inhomogeneities at the high barrier n-InP | poly(pyrrole) interface,” Journal of Applied Physics, vol. 86, no. 11, pp. 6431–6441, 1999. View at Google Scholar · View at Scopus