Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

Table 1

Films thickness and growth rate of polymorphous silicon thin films deposited by PECVD with different 𝑅=Fr[SiH2Cl2]/Fr[H2] and RF powers.

Plasma power (W)	𝑅=0.05		𝑅=0.1
	Films thickness (nm) ± 5 nm	Growth rate (Å /s)	Films thickness (nm) ± 5 nm	Growth rate (Å/s)
10	137	0.7	369	2.0
25	155	0.8	326	1.8
50	171	0.9	247	1.4
100	108	0.6	306	1.7
150	181	1.0	553	3.0