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Journal of Nanomaterials
Volume 2011 (2011), Article ID 268149, 5 pages
Research Article

Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires

Division of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, Sweden

Received 5 July 2011; Accepted 23 August 2011

Academic Editor: Raymond Whitby

Copyright © 2011 Phillip M. Wu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A vision and one of the next challenges in nanoelectronics is the 3D integration of nanowire building blocks. Here we show that capillary forces associated with a liquid-air meniscus between two nanowires provides a simple, controllable technique to bend vertical nanowires into designed, interconnected assemblies. We characterize the electric nature of the junctions between crossed nanowires in a lateral geometry, which is one type of basic unit that can be found in interconnected-bent vertical nanowires. The crossed nanowire junction is capacitive in nature, and we demonstrate that one nanowire can be used to field effect gate the other nanowire, allowing for the possibility to develop extremely narrow conducting channels in nanowire planar or 3D electronic devices.