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Journal of Nanomaterials
Volume 2011, Article ID 319624, 7 pages
Research Article

Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate

Department of Chemistry, School of Applied Science, University of Science and Technology Beijing, Beijing 100083, China

Received 29 January 2011; Revised 16 May 2011; Accepted 22 May 2011

Academic Editor: Zhi Li Xiao

Copyright © 2011 Cun Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Single- and few-layer graphene sheets were fabricated by selective chemical reactions between Co film and SiC substrate. A rapid cooling process was employed. The number of layers and crystallinity of graphene sheets were controlled by process parameters. The formation mechanism of graphene was highly sensitive to carbon diffusion. Free carbon precipitated and then moved across the product layer that was composed mainly of cobalt-silicides. The graphene layer formed homogeneously on the surface and then transferred to the other substrate. This could provide a method for high-quality fabrication of wafer-sized graphene sheets.