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Journal of Nanomaterials
Volume 2011 (2011), Article ID 454730, 6 pages
Research Article

Growth and Characterization of High-Quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation

1Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia
2Materials Engineering Department, College of Engineering, University of Kufa, 00964-21 Najaf, Iraq

Received 10 June 2011; Revised 13 August 2011; Accepted 27 August 2011

Academic Editor: Kui-Qing Peng

Copyright © 2011 L. Shekari et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In the current research, an easy and inexpensive method is used to synthesize highly crystalline gallium nitride (GaN) nanowires (NWs) on two different substrates [i.e., porous zinc oxide (PZnO) and porous gallium nitride (PGaN)] on Si (111) wafer by thermal evaporation without any catalyst. Microstructural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of the substrates in the nucleation and alignment of the GaN NWs. Further structural and optical characterizations were performed using high-resolution X-ray diffraction, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. Results indicate that the NWs have a single-crystal hexagonal GaN structure and growth direction in the (0001) plane. The quality and density of GaN NWs grown on different substrates are highly dependent on the lattice mismatch between the NWs and their substrates. Results indicate that NWs grown on PGaN have better quality and higher density compared to NWs on PZnO.