Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

Table 2

Full-width at half maximum (FWHM) of InN (101) diffraction peak and Crystal size of InN with different percentage of Ar gas ratio during deposition.

N2 : Ar gas ratio	100 : 0	75 : 25	50 : 50
FWHM	0.516	0.492	0.197
Crystal size (nm)	15.87	16.65	41.64