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Journal of Nanomaterials
Volume 2011, Article ID 792759, 11 pages
http://dx.doi.org/10.1155/2011/792759
Research Article

Modeling and Simulation of Special Shaped SOI Materials for the Nanodevices Implementation

Faculty of Electronics, “Politehnica” University of Bucharest, Splaiul Independentei 313, 060042 Bucharest, Romania

Received 30 December 2010; Accepted 4 May 2011

Academic Editor: Shaogang Hao

Copyright © 2011 Cristian Ravariu and Florin Babarada. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In the industrial chain of the nanomaterials for electronic devices, a main stage is represented by the wafer characterization. This paper is starting from a standard SOI wafer with 200 nm film thickness and is proposing two directions for the SOI materials miniaturization, indexing the static characteristics by simulation. The first SOI nanomaterial is a sub-10 nm Si-film with a rectangular shape. The influence of the buried interface fixed charges has to be approached by the distribution theory. The second proposal studies the influence of the vacuum cavity in a “U” shaped SOI nanofilm. In all cases, with rectangular or “U” shape film, the simulations reveal transfer characteristics with a maximum and output characteristics with a minimum for sub-10 nm thickness of the SOI film.