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Journal of Nanomaterials
Volume 2011, Article ID 810879, 12 pages
Research Article

Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuO𝑥 Metal Nanocrystal Capacitors

1Thin Film Nano Tech Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan,Tao-Yuan 333, Taiwan
2Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
3Australian Key Centre for Microscopy and Microanalysis, University of Sydney, NSW 2006, Australia
4Department of Materials Science Engineering, National Taiwan University, Taipei 106, Taiwan

Received 26 February 2011; Revised 16 April 2011; Accepted 6 June 2011

Academic Editor: Edward Andrew Payzant

Copyright © 2011 S. Maikap et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [5 citations]

The following is the list of published articles that have cited the current article.

  • S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, T. C. Tien, and M. J. Tsai, “Impact of TaOx nanolayer at the GeSex∕W interface on resistive switching memory performance and investigation of Cu nanofilament,” Journal of Applied Physics, vol. 111, no. 6, pp. 063710, 2012. View at Publisher · View at Google Scholar
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  • Zhao-Zhao Hou, Gui-Lei Wang, Jin-Juan Xiang, Jia-Xin Yao, Zhen-Hua Wu, Qing-Zhu Zhang, and Hua-Xiang Yin, “ Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High- κ Dielectrics and SiGe Epitaxial Substrates ,” Chinese Physics Letters, vol. 34, no. 9, pp. 097304, 2017. View at Publisher · View at Google Scholar
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