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Journal of Nanomaterials
Volume 2011 (2011), Article ID 810879, 12 pages
Research Article

Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuO𝑥 Metal Nanocrystal Capacitors

1Thin Film Nano Tech Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan,Tao-Yuan 333, Taiwan
2Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
3Australian Key Centre for Microscopy and Microanalysis, University of Sydney, NSW 2006, Australia
4Department of Materials Science Engineering, National Taiwan University, Taipei 106, Taiwan

Received 26 February 2011; Revised 16 April 2011; Accepted 6 June 2011

Academic Editor: Edward Andrew Payzant

Copyright © 2011 S. Maikap et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

S. Maikap, W. Banerjee, T. C. Tien, T. Y. Wang, and J. R. Yang, “Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited Metal Nanocrystal Capacitors,” Journal of Nanomaterials, vol. 2011, Article ID 810879, 12 pages, 2011. doi:10.1155/2011/810879