Journals
Publish with us
Publishing partnerships
About us
Blog
Journal of Nanomaterials
Journal overview
For authors
For reviewers
For editors
Table of Contents
Special Issues
Journal of Nanomaterials
/
2011
/
Article
/
Fig 10
/
Research Article
Ti/Al Ohmic Contacts to n-Type GaN Nanowires
Figure 10
EDS line scan starting in the GaN and crossing the metallization for the 1 : 4.6 contact after annealing for 12 min at 600°C. Note that O and N are not plotted due to the low sensitivity of the EDS detector to light elements.