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Journal of Nanomaterials
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2011
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Article
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Fig 11
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Research Article
Ti/Al Ohmic Contacts to n-Type GaN Nanowires
Figure 11
High resolution TEM image of the interface of the Ti : Al contact after 12 min at 600°C. An amorphous layer has been observed next to the GaN NW and contains Al and O based on a combination of EDS and EELS data.