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Journal of Nanomaterials
Volume 2011, Article ID 906237, 6 pages
http://dx.doi.org/10.1155/2011/906237
Research Article

Design and Analysis of a New Carbon Nanotube Full Adder Cell

1School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 11800 Penang, Malaysia
2Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Malaysia
3Department of Computer Engineering, Islamic Azad University, Ashtian Branch, 39618-13347 Ashtian, Iran

Received 10 January 2011; Accepted 27 February 2011

Academic Editor: Theodorian Borca-Tasciuc

Copyright © 2011 M. H. Ghadiry et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [14 citations]

The following is the list of published articles that have cited the current article.

  • M.H. Ghadiry, M. Nadi S., M.T. Ahmadi, and Asrulnizam Abd Manaf, “A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors,” Microelectronics Reliability, vol. 51, no. 12, pp. 2143–2146, 2011. View at Publisher · View at Google Scholar
  • Mandiar Ghadiry, Asrulnizam Bin Abd Manaf, Mahdieh Nadi, Meisam Rahmani, and M. T. Ahmadi, “Theory of Ionization Mechanism in Graphene Nanoribbons,” Journal of Computational and Theoretical Nanoscience, vol. 9, no. 12, pp. 2190–2192, 2012. View at Publisher · View at Google Scholar
  • Mona Moradi, Reza Faghih Mirzaee, Mohammad Hossein Moaiyeri, and Keivan Navi, “An applicable high-efficient CNTFET-based full adder cell for practical environments,” CADS 2012 - 16th CSI International Symposium on Computer Architecture and Digital Systems, pp. 7–12, 2012. View at Publisher · View at Google Scholar
  • Mahdieh Nadi, Mahdiar Ghadiry, Chia Yee Ooi, and Muhammad Nadzir Marsono, “A semi-analytical approach to study the energy consumption of on-chip networks testing,” Journal of Low Power Electronics, vol. 9, no. 2, pp. 189–197, 2013. View at Publisher · View at Google Scholar
  • Shima Mehrabi, Reza Faghih Mirzaee, Mohammad Hossein Moaiyeri, Keivan Navi, and Omid Hashemipour, “CNFET-Based Design of Energy-Efficient Symmetric Three-Input XOR and Full Adder Circuits,” Arabian Journal for Science and Engineering, 2013. View at Publisher · View at Google Scholar
  • M. Ghadiry, M. Nadi, M. Bahadorian, Asrulnizam ABD Manaf, H. Karimi, and Hatef Sadeghi, “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors,” Microelectronics Reliability, vol. 53, no. 4, pp. 540–543, 2013. View at Publisher · View at Google Scholar
  • Mahdiar Ghadiry, Mahdieh Nadi, and Abu Khari A'Ain, “DLPA: Discrepant Low PDP 8-Bit Adder,” Circuits Systems and Signal Processing, vol. 32, no. 1, pp. 1–14, 2013. View at Publisher · View at Google Scholar
  • Shima Mehrabi, Keivan Navi, and Omid Hashemipour, “Performance analysis and simulation of two different architectures of (6:3) and (7:3) compressors based on carbon Nano-Tube Field Effect Transistors,” Proceedings - Winter Simulation Conference, pp. 322–325, 2013. View at Publisher · View at Google Scholar
  • Mandiar Ghadiry, Mandieh Nadi, Mehdi Saiedmanesh, and H. Karimi Feiz Abadi, “An Analytical Approach to Study Breakdown Mechanism in Graphene Nanoribbon Field Effect Transistors,” Journal of Computational and Theoretical Nanoscience, vol. 11, no. 2, pp. 339–343, 2014. View at Publisher · View at Google Scholar
  • Mahdiar Ghadiry, Harith Ahmad, Alieh Hivechi, Fatemeh Tavakoli, and Asrulnizam Abd Manaf, “Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors,” Plasmonics, 2015. View at Publisher · View at Google Scholar
  • Mahdiar Ghadiry, Asrulnizam Abd Manaf, and Harith Ahmad, “A new approach to study carrier generation in graphene nanoribbons under lateral bias,” Materials Express, vol. 6, no. 3, pp. 283–288, 2016. View at Publisher · View at Google Scholar
  • Iraj Sadegh Amiri, Mahdiar Ghadiry, Iraj Sadegh Amiri, and Mahdiar Ghadiry, “Basic Concept of Field-Effect Transistors,” Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, pp. 9–43, 2017. View at Publisher · View at Google Scholar
  • Iraj Sadegh Amiri, Mahdiar Ghadiry, Iraj Sadegh Amiri, and Mahdiar Ghadiry, “Results and Discussion on Ionization and Breakdown of Graphene Field-Effect Transistor,” Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, pp. 65–83, 2017. View at Publisher · View at Google Scholar
  • Mokhtar Mohammadi Ghanatghestani, Behnam Ghavami, and Honeya Salehpour, “A CNFET full adder cell design for high-speed arithmetic units,” Turkish Journal of Electrical Engineering and Computer Sciences, vol. 25, no. 3, pp. 2399–2409, 2017. View at Publisher · View at Google Scholar