Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

<table>Drain current to source-drain voltage (<svg height="15.25" id="M64" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 16.924999 15.25" width="16.924999" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,7.487,15.187)"><path d="M43 650h280q194 0 282 -85q85 -82 85 -215q0 -173 -123 -267q-107 -83 -297 -83h-236v27q65 5 79.5 19.5t14.5 77.5v402q0 45 -6 62.5t-21.5 24t-57.5 9.5v28zM213 547v-416q0 -55 24.5 -75t81.5 -20q133 0 203 86t70 214q0 80 -30 143t-88 97q-66 41 -170 41
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</svg>-<svg height="15.4375" id="M65" style="vertical-align:-3.41936pt" version="1.1" viewbox="0 0 27.75 15.4375" width="27.75" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M43 650h280q194 0 282 -85q85 -82 85 -215q0 -173 -123 -267q-107 -83 -297 -83h-236v27q65 5 79.5 19.5t14.5 77.5v402q0 45 -6 62.5t-21.5 24t-57.5 9.5v28zM213 547v-416q0 -55 24.5 -75t81.5 -20q133 0 203 86t70 214q0 80 -30 143t-88 97q-66 41 -170 41
q-62 0 -78 -13q-13 -9 -13 -57z" id="x44"></path></g><g transform="matrix(.012,-0,0,-.012,21.421,15.187)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g>
</svg>) characteristics curves. </table>

Journal of Nanomaterials

fig3

Figure 3

Figure 3: Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors 