Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

Table 2

Parameters calculated from the equation of transfer characteristics.

Composition	𝜇 FE (cm^2/Vs)	𝑉th (V)	𝐼ON/𝐼OFF	SS (V/decade)	𝑁𝑡 (cm^−2)
HfIZO	32.6	0.95	~10^6	0.55	8.8 × 10^11
IGZO	23	−3	~10^5	0.75	1.2 × 10^12
ZITO	70	4.5	~10^6	2.25	3.9 × 10^12
GZO	1.63	−0.6	~10^6	1.25	2.1 × 10^12