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Journal of Nanomaterials
Volume 2012, Article ID 173025, 7 pages
Research Article

Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging

1Spansion (Penang) Sdn Bhd, Phase II Free Industrial Zone, Penang, 119900 Bayan Lepas, Malaysia
2Institute of Nanoelectronic Engineering (INEE), Universiti Malaysia Perlis, Perlis, 01000 Kangar, Malaysia

Received 26 May 2012; Accepted 30 July 2012

Academic Editor: Fathallah Karimzadeh

Copyright © 2012 C. L. Gan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Bondpad cratering, Cu ball bond interface corrosion, IMD (intermetal dielectric) cracking, and uncontrolled post-wirebond staging are the key technical barriers in Cu wire development. This paper discusses the UHAST (unbiased HAST) reliability performance of Cu wire used in fine-pitch BGA package. In-depth failure analysis has been carried out to identify the failure mechanism under various assembly conditions. Obviously green mold compound, low-halogen substrate, optimized Cu bonding parameters, assembly staging time after wirebonding, and anneal baking after wirebonding are key success factors for Cu wire development in nanoelectronic packaging. Failure mechanisms of Cu ball bonds after UHAST test and CuAl IMC failure characteristics have been proposed and discussed in this paper.