Evaluation of CdS Interfacial Layers in ZnO Nanowire/Poly(3-Hexylthiophene) Solar Cells

Table 1

Solar cell data for ZnO only, 1-dip CdS, and 3-dip CdS devices.

	Nanowire height (nm)	Efficiency (%)		Voc (V)		Jsc (A/cm^2)		Fill factor (%)
		Day 1	Day 5	Day 1	Day 5	Day 1	Day 5	Day 1	Day 5
ZnO only	0	0.022	0.071	152	212	4.9𝐸−04	1.0𝐸−03	32.7	32.9
	500	0.015	0.282	381	394	8.9𝐸−05	1.7𝐸−03	43.2	40.9
	1000	0.009	0.131	147	146	1.7𝐸−04	2.6𝐸−03	36.2	33.9
	2000	0.000	0.007	10	24	7.5𝐸−05	1.1𝐸−03	43.9	20.9
1-dip CdS	0	0.002	0.009	419	367	2.1𝐸−05	1.4𝐸−04	19.1	16.2
	500	0.015	0.112	421	399	1.0𝐸−04	8.8𝐸−04	33.8	31.8
	1000	0.002	0.000	17	10	6.4𝐸−04	6.8𝐸−05	15	78.6
	2000	0.000	0.002	10	10	5.1𝐸−05	2.9𝐸−04	19.1	75.3
3-dip CdS	0	0.008	0.017	207	313	2.9𝐸−04	2.1𝐸−04	24.5	31.7
	500	0.282	0.442	364	428	2.1𝐸−03	2.9𝐸−03	37.1	35.7
	1000	0.023	0.013	66	44	1.4𝐸−03	1.2𝐸−03	23.3	19.1
	2000	0.001	0.004	10	10	7.1𝐸−04	9.5𝐸−04	21.8	94.1