Research Article

Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models

Figure 1

C-V measurements from SiO2 (a) and HfO2 (b) at different frequencies. No significant frequency response was observed in the reference SiO2 and HfO2 dielectrics.
241470.fig.001a
(a)
241470.fig.001b
(b)