Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models

Figure 2

C-V measurements from a Ce_𝑥Hf_1−𝑥O₂ thin film at different frequencies (from 100 Hz to 200 kHz). Frequency dispersion was obtained regardless of the interfacial layer of MOS structures and measurement system, which was identified due to the frequency dependence of k-value (termed dielectric relaxation).