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Journal of Nanomaterials
Volume 2012, Article ID 242459, 8 pages
Research Article

Robustness Comparison of Emerging Devices for Portable Applications

1Department of Electronics and Telecommunication Engineering, P.D.V.V.P College of Engineering, Ahmednagar 414 111, India
2Department of Electronics Engineering, AMU, Aligarh, India
3Vishwabharati Acadmey's COE, Sarola Baddi, Ahmednagar, India

Received 4 October 2011; Accepted 15 November 2011

Academic Editor: Christian Brosseau

Copyright © 2012 S. D. Pable et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Extensive development in portable devices imposes pressing need for designing VLSI circuits with ultralow power (ULP) consumption. Subthreshold operating region is found to be an attractive solution for achieving ultralow power. However, it limits the circuit speed due to use of parasitic leakage current as drive current. Maintaining power dissipation at ultralow level with enhanced speed will further broaden the application area of subthreshold circuits even towards the field programmable gate arrays and real-time portable domain. Operating the Si-MOSFET in subthreshold regions degrades the circuit performance in terms of speed and also increases the well-designed circuit parameter spreading due to process, voltage, and temperature variations. This may cause the subthreshold circuit failure at very low supply voltage. It is essential to examine the robustness of most emerging devices against PVT variations. Therefore, this paper investigates and compares the performance of most promising upcoming devices like CNFET and DG FinFET in subthreshold regions. Effect of PVT variation on performance of CNFET and DG FinFET has been explored and it is found that CNFET is more robust than DG-FinFET under subthreshold conditions against PVT variations.