A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption
Figure 4
Plan-view SEM images of the SiNWs grown with various SiCl4 feeding temperatures: (a) 850°C, (b) 800°C, (c) 700°C, and (d) 600°C employing the direct heating procedures without H2 annealing.
