A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption

Figure 8

The reflectance spectra of the SiNWs grown on Si (111) with a height of (a) 2 μm, (b) 5 μm, (c) 7 μm, and (d) 10 μm for different growth time periods employing the ramp-cooling procedures, and those of (e) the blank silicon wafer.