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Journal of Nanomaterials
Volume 2012, Article ID 409123, 6 pages
http://dx.doi.org/10.1155/2012/409123
Research Article

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

1Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Section 3, Chung-Hsiao E. Road, Taipei 106, Taiwan
2Key Laboratory of Interface Science and Engineering in Advanced Materials, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, 79 W. Yingze Street, Shanxi, Taiyuan, China

Received 30 May 2012; Accepted 5 September 2012

Academic Editor: Jinquan Wei

Copyright © 2012 Lung-Chien Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Lung-Chien Chen, Ching-Ho Tien, Liu Xuguang, and Xu Bingshe, “Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode,” Journal of Nanomaterials, vol. 2012, Article ID 409123, 6 pages, 2012. https://doi.org/10.1155/2012/409123.