Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

Figure 5

Light output power of the GaN-based LEDs with various AlN nanorod structures as a function of forward current: (a) 𝛼=0° (our previous study), (b) oblique 𝛼=80° (our previous study), (c) zigzag 𝛼=±80° (this study), and (d) helical 𝛼=80° (this study).