The Effect of Mg Dopant and Oxygen Partial Pressure on Microstructure and Phase Transformation of Thin Films
Figure 5
The film thickness of the zinc titanate deposited at 400°C of substrate temperature and then annealed at 800°C with different Ar to O2 ratio (a) 10 : 0, (b) 9 : 1, and (c) 8 : 2.
