Research Article
The Effect of Mg Dopant and Oxygen Partial Pressure on Microstructure and Phase Transformation of Thin Films
Table 1
RF sputter conditions for the magnesium zinc titanate films.
| | Target | (Zn0.95Mg0.05)TiO3 |
| | Substrates | SiO2/Si | | Target size in diameter (mm) | 76.2 | | Target to substrate distance (mm) | 90 | | RF power (W) | 150 | | Chamber pressure (Pa) | 6.6 × 10−4 | | Working pressure (Pa) | 2.5 | | Sputtering gas | Ar | | Ar flow (sccm) | 50 | | Substrate temperature (°C) | 400 | | Deposition time (min) | 120 | | Deposition rate (nm/min) | 1.4 | | Substrate bias | Grounded |
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