Effects of Additional Oxygen Flow on the Optical and Electrical Properties of Ion Beam Sputtering Deposited Molybdenum-Doped Zinc Oxide Layer

Table 1

The deposition parameters for SiO₂ buffer layer.

Parameter	Composition, setting
Target material	SiO2
Working pressure (Pa)	0.67
Substrate temperature (^°C)	130
Film growth rate (nm/s)	0.05
Film thickness (nm)	70