Research Article

Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF-MOMBE with GZO and AlN Buffer Layers

Figure 3

Cross-sectional TEM image of typical InN area with the corresponding SAED pattern shows from (a) InN/GZO film and (b) InN/a-AlN film.
853021.fig.003a
(a)
853021.fig.003b
(b)